Ryzen 5 RAM Timings
# decode-dimms version 4.3
Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others
Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/3-0051
Guessing DIMM is in bank 2
Kernel driver used ee1004
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125 OK (0x0D79)
# of bytes written to SDRAM EEPROM 384
Total number of bytes in EEPROM 512
Fundamental Memory type DDR4 SDRAM
SPD Revision 1.1
Module Type UDIMM
EEPROM CRC of bytes 128-253 OK (0xB9C3)
---=== Memory Characteristics ===---
Maximum module speed 2666 MT/s (PC4-21300)
Size 8192 MB
Banks x Rows x Columns x Bits 16 x 16 x 10 x 64
SDRAM Device Width 8 bits
Ranks 1
Primary Bus Width 64 bits
AA-RCD-RP-RAS (cycles) 19-19-19-43
Supported CAS Latencies 20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T
---=== Timings at Standard Speeds ===---
AA-RCD-RP-RAS (cycles) as DDR4-2666 19-19-19-43
AA-RCD-RP-RAS (cycles) as DDR4-2400 17-17-17-39
AA-RCD-RP-RAS (cycles) as DDR4-2133 15-15-15-35
AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-30
AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-26
---=== Timing Parameters ===---
Minimum Cycle Time (tCKmin) 0.750 ns
Maximum Cycle Time (tCKmax) 1.600 ns
Minimum CAS Latency Time (tAA) 13.750 ns
Minimum RAS to CAS Delay (tRCD) 13.750 ns
Minimum Row Precharge Delay (tRP) 13.750 ns
Minimum Active to Precharge Delay (tRAS) 32.000 ns
Minimum Active to Auto-Refresh Delay (tRC) 45.750 ns
Minimum Recovery Delay (tRFC1) 350.000 ns
Minimum Recovery Delay (tRFC2) 260.000 ns
Minimum Recovery Delay (tRFC4) 160.000 ns
Minimum Four Activate Window Delay (tFAW) 21.000 ns
Minimum Row Active to Row Active Delay (tRRD_S) 3.000 ns
Minimum Row Active to Row Active Delay (tRRD_L) 4.900 ns
Minimum CAS to CAS Delay (tCCD_L) 5.000 ns
Minimum Write Recovery Time (tWR) 15.000 ns
Minimum Write to Read Time (tWTR_S) 2.500 ns
Minimum Write to Read Time (tWTR_L) 7.500 ns
---=== Other Information ===---
Package Type Monolithic
Maximum Activate Count (MAC) Unlimited
Post Package Repair One row per bank group
Soft PPR Supported
Module Nominal Voltage 1.2 V
Thermal Sensor No
---=== Physical Characteristics ===---
Module Height 32 mm
Module Thickness 2 mm front, 2 mm back
Module Reference Card A revision 2
---=== Manufacturer Data ===---
Module Manufacturer Samsung
DRAM Manufacturer Samsung
Manufacturing Location Code 0x03
Manufacturing Date 2019-W35
Assembly Serial Number 0x132024DB
Part Number M378A1K43DB2-CTD
Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/3-0053
Guessing DIMM is in bank 4
Kernel driver used ee1004
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125 OK (0x0D79)
# of bytes written to SDRAM EEPROM 384
Total number of bytes in EEPROM 512
Fundamental Memory type DDR4 SDRAM
SPD Revision 1.1
Module Type UDIMM
EEPROM CRC of bytes 128-253 OK (0xB9C3)
---=== Memory Characteristics ===---
Maximum module speed 2666 MT/s (PC4-21300)
Size 8192 MB
Banks x Rows x Columns x Bits 16 x 16 x 10 x 64
SDRAM Device Width 8 bits
Ranks 1
Primary Bus Width 64 bits
AA-RCD-RP-RAS (cycles) 19-19-19-43
Supported CAS Latencies 20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T
---=== Timings at Standard Speeds ===---
AA-RCD-RP-RAS (cycles) as DDR4-2666 19-19-19-43
AA-RCD-RP-RAS (cycles) as DDR4-2400 17-17-17-39
AA-RCD-RP-RAS (cycles) as DDR4-2133 15-15-15-35
AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-30
AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-26
---=== Timing Parameters ===---
Minimum Cycle Time (tCKmin) 0.750 ns
Maximum Cycle Time (tCKmax) 1.600 ns
Minimum CAS Latency Time (tAA) 13.750 ns
Minimum RAS to CAS Delay (tRCD) 13.750 ns
Minimum Row Precharge Delay (tRP) 13.750 ns
Minimum Active to Precharge Delay (tRAS) 32.000 ns
Minimum Active to Auto-Refresh Delay (tRC) 45.750 ns
Minimum Recovery Delay (tRFC1) 350.000 ns
Minimum Recovery Delay (tRFC2) 260.000 ns
Minimum Recovery Delay (tRFC4) 160.000 ns
Minimum Four Activate Window Delay (tFAW) 21.000 ns
Minimum Row Active to Row Active Delay (tRRD_S) 3.000 ns
Minimum Row Active to Row Active Delay (tRRD_L) 4.900 ns
Minimum CAS to CAS Delay (tCCD_L) 5.000 ns
Minimum Write Recovery Time (tWR) 15.000 ns
Minimum Write to Read Time (tWTR_S) 2.500 ns
Minimum Write to Read Time (tWTR_L) 7.500 ns
---=== Other Information ===---
Package Type Monolithic
Maximum Activate Count (MAC) Unlimited
Post Package Repair One row per bank group
Soft PPR Supported
Module Nominal Voltage 1.2 V
Thermal Sensor No
---=== Physical Characteristics ===---
Module Height 32 mm
Module Thickness 2 mm front, 2 mm back
Module Reference Card A revision 2
---=== Manufacturer Data ===---
Module Manufacturer Samsung
DRAM Manufacturer Samsung
Manufacturing Location Code 0x03
Manufacturing Date 2019-W35
Assembly Serial Number 0x13202DEB
Part Number M378A1K43DB2-CTD
Number of SDRAM DIMMs detected and decoded: 2